Single event upset and charge collection imaging using ion microbeams
Conference
·
OSTI ID:5761805
- Sandia National Labs., Albuquerque, NM (United States)
- Melbourne Univ. (Australia). Micro Analytical Research Centre
Single Event Upset Imaging utilizes the scanning of a micro-focused MeV ion beams across an integrated circuit to test the upset response of the circuit to energetic heavy ions. Using this technique, the position dependence of logic state upsets, as well as the charge collection efficiency of an integrated circuit, can be directly measured with micron resolution. We present in this paper a review of a series of measurements carried out on the TA670 16K static random access memory chip which display this technique's capabilities.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- DOE; USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5761805
- Report Number(s):
- SAND-92-0304C; CONF-920270--1; ON: DE92008320
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
665100 -- Nuclear Techniques in Condensed Matter Physics -- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BEAMS
CHARGE COLLECTION
CHEMICAL ANALYSIS
ELECTRONIC CIRCUITS
IMAGE PROCESSING
INTEGRATED CIRCUITS
ION BEAMS
ION MICROPROBE ANALYSIS
MICROANALYSIS
MICROELECTRONIC CIRCUITS
NONDESTRUCTIVE ANALYSIS
PROCESSING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
665100 -- Nuclear Techniques in Condensed Matter Physics -- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BEAMS
CHARGE COLLECTION
CHEMICAL ANALYSIS
ELECTRONIC CIRCUITS
IMAGE PROCESSING
INTEGRATED CIRCUITS
ION BEAMS
ION MICROPROBE ANALYSIS
MICROANALYSIS
MICROELECTRONIC CIRCUITS
NONDESTRUCTIVE ANALYSIS
PROCESSING