X-Ray Diffraction Study of Heteroepitaxy of MOCVD Grown TiO₂ and VO₂ Films on Sapphire Single Crystals

Conference · Mon Jan 14 23:00:00 EST 1991 · MRS Proceedings

DOI:https://doi.org/10.1557/proc-221-181· OSTI ID:5554626

You, Hoydoo ^[1]; Chang, H. L. M. ^[1]; Chiarello, R. P. ^[1]; Lam, D. J. ^[1]

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1. Argonne National Laboratory (ANL), Argonne, IL (United States)

A four-circle diffractometry technique is used to determine the heteroepitaxial relations of VO₂ and TiO₂ thin films grown by an MOCVD technique on sapphire ($0001$) and ($$11\overline{2}0$$) surfaces. The use of a reflective geometry eliminates special sample preparation of the sample for the x-ray diffraction measurements. The distribution of epitaxial domains is found to depend strongly on the symmetry of the underlying substrate.

• Research Organization: Argonne National Laboratory (ANL), Argonne, IL (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)
• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 5554626
• Report Number(s): ANL/CP--73159; CONF-910406--18; ON: DE91013764
• Journal Information: MRS Proceedings, Journal Name: MRS Proceedings Vol. 221; ISSN 1946-4274
• Publisher: Springer Nature
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360202* -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COHERENT SCATTERING
CORUNDUM
DEPOSITION
DIFFRACTION
EPITAXY
FILMS
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
SAPPHIRE
SCATTERING
SUBSTRATES
SURFACE COATING
THIN FILMS
TITANIUM COMPOUNDS
TITANIUM OXIDES
TRANSITION ELEMENT COMPOUNDS
VANADIUM COMPOUNDS
VANADIUM OXIDES
X-RAY DIFFRACTION