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U.S. Department of Energy
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Raman characterization of semiconductors

Conference ·
OSTI ID:55389
 [1]
  1. Univ. of North Carolina, Charlotte, NC (United States). Dept. of Electrical Engineering
Raman scattering has been used as material characterizations, such as crystal orientation, imperfections, structural and composition disorders, and even carrier concentration and mobility. The use of Raman scattering for the determination of small particle size is emphasized because recently the physics of nanoscale particle has become an area of intense activities.
OSTI ID:
55389
Report Number(s):
CONF-9310328--; ISBN 1-56676-232-4
Country of Publication:
United States
Language:
English

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