TEM study of ion-implanted semi-insulating gallium arsenide

Technical Report · Wed Jun 01 04:00:00 EDT 1983

OSTI ID:5536880

Choksi, H

The defect structures produced after annealing semi-insulating GaAs wafers implanted with either chromium alone, oxygen alone or both chromium and oxygen have been studied using transmission electron microscopy (TEM). A comparison was made between wafers in which the implantation was done into an initially perfect crystal and wafers that had been pre-implanted with Ga and As to produce an initially amorphous surface layer. Though the annealing was carried out at a relatively high temperature (approx. 830/sup 0/C), it was found that the extended defect structure after annealing depended critically on the nature of the damage produced by implantation. The previously amorphized and implanted wafers could be distinguished from the as-grown and implanted wafers: the defects in the former consisted primarily of microtwins on (111) planes whereas in the latter they consisted of dislocation networks that delineated adjacent areas of crystal slightly misoriented with respect to one another. No precipitates of the implanted species were detected.

• Research Organization: Lawrence Berkeley Lab., CA (USA)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 5536880
• Report Number(s): LBL-16308; ON: DE84001879
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
CHROMIUM IONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DAMAGE
ELECTRON MICROSCOPY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
ION IMPLANTATION
IONS
MICROSCOPY
OXYGEN IONS
PNICTIDES
TRANSMISSION ELECTRON MICROSCOPY