Electron beam evaporation of oriented Nb films onto GaAs crystals in ultrahigh vacuum

Journal Article · Mon Aug 18 04:00:00 EDT 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.97608· OSTI ID:5535800

Eizenberg, M; Smith, D A; Heiblum, M; Segmueller, A

Thin layers of Nb, 100--400 A-circle thick, were grown by electron beam evaporation on (100)GaAs substrates in a molecular beam epitaxy system. The crystallographic relationship between deposit and substrate was monitored i-italicn-italic s-italici-italict-italicu-italic by reflection high-energy electron diffraction, and after deposition by transmission electron microscopy and grazing-incidence x-ray diffraction. In spite of the large lattice mismatch (17%) and the low deposition temperature (40--400 /sup 0/C), a quite well oriented deposit with the orientation (100)Nbparallel(100)GaAs and (001)Nbparallel(011)GaAs was obtained for a substrate temperature of --170 /sup 0/C. Changing the substrate temperature from the optimum value of --170 /sup 0/C in either direction resulted in a gradual deterioration of the epitaxy.

• Research Organization: IBM Thomas J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598
• OSTI ID: 5535800
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 49:7; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360101* -- Metals & Alloys-- Preparation & Fabrication
ARSENIC COMPOUNDS
ARSENIDES
COATINGS
COHERENT SCATTERING
COLLISIONS
DIFFRACTION
ELECTRON COLLISIONS
ELECTRON DIFFRACTION
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
EVAPORATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
METALS
MICROSCOPY
NIOBIUM
ORIENTATION
PHASE TRANSFORMATIONS
PNICTIDES
SCATTERING
TRANSITION ELEMENTS
VACUUM EVAPORATION
VAPOR DEPOSITED COATINGS
VAPOR PHASE EPITAXY
X-RAY DIFFRACTION