Infrared optical properties of mixed-phase thin films studied by spectroscopic ellipsometry using boron nitride as an example
- Faculty of Physics and Geoscience, University of Leipzig, Linnestrasse 5, D-04103 Leipzig (Germany)
- Institute of Surface Modification, Permoserstrasse 15, D-04303 Leipzig (Germany)
- Center for Microelectronic and Optical Materials Research, and Department of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588 (United States)
- Institute of Physics, Faculty of Science, Technical University Chemnitz-Zwickau, D-09107 Chemnitz (Germany)
We present a microstructure-dependent anisotropic infrared-optical dielectric function model for mixed-phase polycrystalline material from which we derive the transverse and longitudinal-optical modes observable in thin films. Infrared ellipsometry over the wavelength range from 700 to 3000cm{sup {minus}1} is then used to determine the phase and microstructure of polycrystalline and multilayered hexagonal and cubic boron nitride thin films deposited by magnetron sputtering onto (100) silicon. The ellipsometric data depend on the thin-film multilayer structure, the layer-phase composition, and the average orientation of the hexagonal grain c axes. In particular, we demonstrate the existence of spectral shifts of longitudinal optical phonons as a function of microstructure, i.e., the average grain crystallographic orientation within the mixed-phase material. {copyright} {ital 1997} {ital The American Physical Society}
- OSTI ID:
- 553102
- Journal Information:
- Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 20 Vol. 56; ISSN PRBMDO; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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