Infrared ellipsometry on hexagonal and cubic boron nitride thin films

Journal Article · Fri Feb 28 23:00:00 EST 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.118655· OSTI ID:526481

Franke, E; Neumann, H ^[1]; Schubert, M ^[2]; Tiwald, T E; Woollam, J A ^[3]; Hahn, J ^[4]

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1. Institute of Surface Modification, D-04303 Leipzig (Germany)
2. Faculty of Physics and Geoscience, University of Leipzig, D-04103 Leipzig (Germany)
3. Center for Microelectronic and Optical Materials Research, and Department of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588 (United States)
4. Institute of Physics, Technical University Chemnitz-Zwickau, D-09107 Chemnitz (Germany)

Infrared spectroscopic ellipsometry (IRSE) over the wavelength range from 700 to 3000 cm{sup {minus}1} has been used to study and distinguish the microstructure of polycrystalline hexagonal and cubic boron nitride thin films deposited by magnetron sputtering onto (100) silicon. The IRSE data are sensitive to the thin-film layer structure, phase composition, and average grain c-axes orientations of the hexagonal phase. We determine the amount of cubic material in high cubic boron nitride content thin films from the infrared optical dielectric function using an effective medium approach. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 526481
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 70; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON NITRIDES
COATINGS
DIELECTRIC PROPERTIES
ELLIPSOMETRY
GRAIN ORIENTATION
INFRARED SPECTRA
MICROSTRUCTURE
THIN FILMS