Anisotropy of boron nitride thin-film reflectivity spectra by generalized ellipsometry

Journal Article · Mon Mar 31 23:00:00 EST 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.118701· OSTI ID:534417

Schubert, M; Rheinlaender, B ^[1]; Franke, E; Neumann, H ^[2]; Hahn, J; Roeder, M; Richter, F ^[3]

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1. Faculty of Physics and Geoscience, University of Leipzig, D-04103 Leipzig (Germany)
2. Institute of Surface Modification, D-04303 Leipzig (Germany)
3. Institute of Physics, Technical University Chemnitz-Zwickau, D-09107 Chemnitz (Germany)

Generalized variable angle spectroscopic ellipsometry (gVASE) over the photon energy range from 1.5 to 3.5 eV has been used to study and distinguish the hexagonal and cubic phases of boron nitride in thin films (50{endash}500 nm) deposited by magnetron sputtering onto (100) silicon. Furthermore, gVASE is used to characterize the anisotropic reflectivity of the hexagonal phase films with different microstructures. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 534417
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 70; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANISOTROPY
BORON NITRIDES
CRYSTAL GROWTH
ELLIPSOMETRY
OPTICAL REFLECTION
PHASE STUDIES
REFLECTIVITY
SPUTTERING
THIN FILMS