Influence of photoexcitation on hopping conduction in neutron-transmutation-doped GaAs
The nature of the tunneling-assisted hopping conduction in neutron-transmutation-doped GaAs has been studied under photoexcitation with a photon energy of 1.32 eV. It is found that the dopants activated by annealing around 400 /sup 0/C provide the electrons to the defect levels originating the hopping conduction even when under photoexcitation. The hopping conduction under photoexcitation is affected by quenching in photoconductance below 120 K concerned with the main electron trap (EL2) and/or the As antisite defect (As/sub Ga/) induced by the neutron irradiation. The photoconductance of the samples with a lower radiation damage, As/sub Ga/less than or equal to1 x 10/sup 18/ cm/sup -3/, consists of the coexistence of the hopping and band conductions.
- Research Organization:
- College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184, Japan
- OSTI ID:
- 5529243
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 63:4; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DAMAGE
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRONIC STRUCTURE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
TRAPPING
TRAPS