Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

Journal Article · Fri Nov 21 04:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4902311· OSTI ID:22402666

Vakulenko, O. V. ^[1]; Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J. ^[2]

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1. Department of Physics, Taras Shevchenko National University of Kyiv, 64 Volodymyrs'ka St., Kyiv 01601 (Ukraine)
2. Institute for Nanoscience and Engineering, University of Arkansas, 731 W. Dickson St., Fayetteville, Arkansas 72701 (United States)

The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80 K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83 eV to 1.0 eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

• OSTI ID: 22402666
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 19 Vol. 116; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DISTRIBUTION
GALLIUM ARSENIDES
HOLES
INDIUM ARSENIDES
PHOTOCONDUCTIVITY
PHOTOLUMINESCENCE
QUANTUM DOTS
QUENCHING
SPACERS
TRANSIENTS