Processing issues for thin film CdTe/CdS solar cells

Journal Article · Sat Feb 01 04:00:00 EST 1997 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.52914· OSTI ID:552865

McCandless, B E; Birkmire, R W; Jensen, D G; Phillips, J E; Youm, I ^[1]

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1. University Center of Excellence For Photovoltaic Research and Education, Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716 (United States)

Processing options addressing critical issues associated with fabrication of high efficiency thin film CdTe/CdS solar cells are presented. Particular focus is given to methods for: minimizing CdS loss during CdCl{sub 2} heat treatment; obtaining high open circuit voltages; obtaining spatially uniform properties; and forming ohmic contacts. Data is presented for cells deposited by physical vapor deposition (PVD) which demonstrates that CdS loss can be overcome by use of CdTe{sub 1{minus}x}S{sub x} absorber layers and by controlling the delivery of CdCl{sub 2} vapor species during heat treatment. The CdCl{sub 2} vapor treatments are shown to produce residue-free surfaces and uniform film properties which leads to uniform cell performance. State of the art open circuit voltages ({gt}850mV) are obtained with PVD cells by performing a short high temperature anneal prior to CdCl{sub 2} treatment. Low resistance contacts using diffused Cu doping followed by surface etching are demonstrated on CdTe/CdS thin films deposited by five methods. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 552865
• Report Number(s): CONF-961178--
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 394; ISSN 0094-243X; ISSN APCPCS
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
CADMIUM SULFIDES
CADMIUM TELLURIDES
CHEMICAL COMPOSITION
FABRICATION
HEAT TREATMENTS
PERFORMANCE
PHOTOVOLTAIC CELLS
SEMICONDUCTOR JUNCTIONS
SURFACE TREATMENTS
THERMAL DIFFUSION