Study of the defect levels, electrooptics, and interface properties of polycrystalline CdTe and CdS thin films and their junction

Book · Wed Dec 31 04:00:00 EST 1997

OSTI ID:302528

Abulfotuh, F A; Balcioglu, A; Wangensteen, T; Moutinho, H R; Hassoon, F; Kazmerski, L L ^[1]; Al-Douri, A; Alnajjar, A ^[2]

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1. National Renewable Energy Lab., Golden, CO (United States)
2. United Arab Emirates Univ., Al-Ain (United Arab Emirates). Physics Dept.

In this study, the electrical behavior of CdS/CdTe junctions was investigated using deep-level transient spectroscopy (DLTS) and capacitance-voltage (c-v) measurements. The results were then correlated to chemical composition and optical properties (measured by using a wavelength-scanning ellipsometer) of the CdTe film and the dominant defect states were determined by photoluminescence (PL) emission measured before and after post-deposition CdCl{sub 2} treatments. CdTe films used in this study were prepared by electrochemical deposition (ED), close-spaced sublimation (CSS), and physical vapor deposition (PVD). The chemical and heat treatments are shown to decrease Cd-vacancy levels (PL measurements), which determine various parameters crucial to the device performance such as the type and concentration of the dominant defects and deep levels, greatly affect the device performance by controlling open-circuit voltage.

• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC36-83CH10093
• OSTI ID: 302528
• Report Number(s): CONF-970953--
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
CADMIUM SULFIDES
CADMIUM TELLURIDE SOLAR CELLS
CADMIUM TELLURIDES
CHEMICAL COMPOSITION
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
OPTICAL PROPERTIES
PERFORMANCE
SEMICONDUCTOR JUNCTIONS
VACANCIES