Influence of CdS/CdTe interface properties on the device properties
- National Renewable Energy Lab., Golden, CO (United States); and others
In this paper, the authors have focused on the formation and the role of the CdS/CdTe interface on CdTe solar cells. The devices were made using chemical bath deposited (CBD) CdS on SnO{sub 2}/glass substrates and the CdTe was deposited by close spaced sublimation (CSS) and subsequently CdCl{sub 2} treated and annealed. Compositional analysis showed considerable interdiffusion of Te and S as well as Cl accumulation at the interface. Micro-photoluminescence (PL) analysis reveals sulfur accumulation at the grain boundaries and a graded CdS{sub x}Te{sub 1{minus}x} alloy at the interface. Their analysis leads the authors to conclude that Cl accumulation and anion vacancies result in a one sided n{sup +}-p junction. This model could explain the collection loss in the CdS layer, seen in the spectral response of CdS/CdTe devices.
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC36-83CH10093
- OSTI ID:
- 302524
- Report Number(s):
- CONF-970953--
- Country of Publication:
- United States
- Language:
- English
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