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Influence of processing conditions on performance and stability in polycrystalline thin-film CdTe-based solar cells

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.57896· OSTI ID:357194
;  [1]
  1. Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716 (United States)

The influence of processing conditions on the performance of polycrystalline thin-film CdTe-based solar cells and the relationship to device stability are addressed. Specifically, processing conditions with respect to the window layer, post-CdTe deposition treatments, and contacting treatments are examined. The use of high resistivity interlayers between the transparent conductive oxide and the CdS allows open circuit voltage to be maintained as the CdS thickness is reduced. CdS-CdTe interdiffusion is reduced by either use of a short 600&hthinsp;{degree}C anneal prior to CdCl{sub 2} vapor treatment or by use of CdTe{sub 1{minus}x}S{sub x} alloy absorber layers. Finally, the effects of CdTe{sub 1{minus}x}S{sub x} surface modification and Cu reaction on device current-voltage behavior are presented. {copyright} {ital 1999 American Institute of Physics.}

Sponsoring Organization:
USDOE
OSTI ID:
357194
Report Number(s):
CONF-980935--
Journal Information:
AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 462; ISSN 0094-243X; ISSN APCPCS
Country of Publication:
United States
Language:
English