Influence of processing conditions on performance and stability in polycrystalline thin-film CdTe-based solar cells

Journal Article · Mon Mar 01 04:00:00 EST 1999 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.57896· OSTI ID:357194

McCandless, B E; Birkmire, R W ^[1]

---

1. Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716 (United States)

The influence of processing conditions on the performance of polycrystalline thin-film CdTe-based solar cells and the relationship to device stability are addressed. Specifically, processing conditions with respect to the window layer, post-CdTe deposition treatments, and contacting treatments are examined. The use of high resistivity interlayers between the transparent conductive oxide and the CdS allows open circuit voltage to be maintained as the CdS thickness is reduced. CdS-CdTe interdiffusion is reduced by either use of a short 600&hthinsp;{degree}C anneal prior to CdCl{sub 2} vapor treatment or by use of CdTe{sub 1{minus}x}S{sub x} alloy absorber layers. Finally, the effects of CdTe{sub 1{minus}x}S{sub x} surface modification and Cu reaction on device current-voltage behavior are presented. {copyright} {ital 1999 American Institute of Physics.}

• Sponsoring Organization: USDOE
• OSTI ID: 357194
• Report Number(s): CONF-980935--
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 462; ISSN 0094-243X; ISSN APCPCS
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
CADMIUM COMPOUNDS
CADMIUM SULFIDES
CADMIUM TELLURIDES
ELECTRICAL PROPERTIES
HEAT TREATMENTS
SOLAR CELLS
STABILITY
SURFACE TREATMENTS
TELLURIUM COMPOUNDS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
THIN FILMS