Interdiffusion in polycrystalline thin-film CdTe/CdS solar cells

Journal Article · Sun Dec 31 23:00:00 EST 1995 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.49426· OSTI ID:450113

Mao, D; Feng, L H; Zhu, Y; Tang, J; Song, W; Collins, R; Williamson, D L; Trefny, J U ^[1]

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1. Department of Physics, Colorado School of Mines, Golden, Colorado 80401 (United States)

We have investigated the interdiffusion between CdTe and CdS resulting from post-deposition annealing treatment. X-ray diffraction (XRD) measurements reveal the presence of CdTe{sub 1{minus}{ital x}}S{sub {ital x}} in the CdTe layer and CdS{sub 1{minus}{ital y}} Te{sub {ital y}} in the CdS layer. {ital x} and {ital y} values are estimated to be 0.03 and 0.08, respectively, based on the measured lattice spacing. CdCl{sub 2} coated on the CdTe/CdS structure prior to annealing enhances significantly the degree of interdiffusion. The S diffusion profile in the CdTe layer is explored. A 10 meV decrease of CdS bandgap is observed as a result of interdiffusion. {copyright} {ital 1996 American Institute of Physics.}

• Sponsoring Organization: USDOE
• OSTI ID: 450113
• Report Number(s): CONF-9605265--
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 353; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
ANNEALING
CADMIUM SULFIDES
CADMIUM TELLURIDES
DIFFUSION
ENERGY GAP
LATTICE PARAMETERS
POLYCRYSTALS
SOLAR CELLS
THIN FILMS
X-RAY SPECTROSCOPY
XRD