Effect of group V/III flux ratio on the reliability of GaAs/Al/sub 0. 3/Ga/sub 0. 7/As laser diodes prepared by molecular beam epitaxy

Journal Article · Mon Jan 25 00:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99484· OSTI ID:5525510

Hayakawa, T; Takahashi, K; Suyama, T; Kondo, M; Yamamoto, S; Hijikata, T

The effect of group V/III flux ratio ..gamma.. on the reliability of GaAs/Al/sub 0.3/Ga/sub 0.7/As double-heterostructure lasers grown by molecular beam epitaxy at 720 /sup 0/C has been studied. The threshold current does not change with ..gamma... By contrast, the degradation rate strongly depends on ..gamma.. and it takes a minimum at ..gamma..approx.3 where the photoluminescence intensity of the Al/sub 0.3/Ga/sub 0.7/As cladding layer is maximum. In the case of ..gamma..approx.3, the degradation rate is lower than that of lasers grown by liquid phase epitaxy.

• Research Organization: Central Research Laboratories, Sharp Corporation, Tenri, Nara 632, Japan
• OSTI ID: 5525510
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 52:4
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ALUMINIUM ARSENIDES
MOLECULAR BEAM EPITAXY
GALLIUM ARSENIDES
SEMICONDUCTOR LASERS
FABRICATION
RELIABILITY
THRESHOLD CURRENT
EXPERIMENTAL DATA
OPERATION
OPTIMIZATION
PERFORMANCE
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
EPITAXY
GALLIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
PNICTIDES
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)