Instability threshold resonances in directly modulated external-cavity semiconductor lasers

Journal Article · Mon Jan 25 04:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99488· OSTI ID:5525490

Schremer, A; Fujita, T; Lin, C F; Tang, C L

The relationship between the modulation frequency and maximum modulation depth for stable and low-noise oscillation in external-cavity semiconductor lasers is investigated. Sharp resonances in the threshold for the onset of instability occur when the laser is nearly synchronously modulated. A physical model is proposed to explain these observations.

• Research Organization: Cornell University, Ithaca, New York 14853
• OSTI ID: 5525490
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 52:4; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
FREQUENCY MODULATION
INSTABILITY
LASER CAVITIES
LASERS
MATHEMATICAL MODELS
MODULATION
NOISE
OSCILLATIONS
RESONANCE
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS