Intensity noise suppression and modulation characteristics of a laser diode coupled to an external cavity

Journal Article · Tue May 01 04:00:00 EDT 1984 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1984.1072421· OSTI ID:6023337

Fujita, T; Fujito, K; Ishizuka, S; Sato, H; Serizawa, H

Static and dynamic properties of a GaAlAs laser diode with an external cavity (1.5-50 cm) have been studied experimentally. It is found that the optical feedback induced intensity noise is strikingly suppressed by 30 dB when a single frequency oscillation is realized with good phase matching. The threshold of modulation depth, over which intensity noise increases abruptly, has been measured as a function of the modulation frequency in a range of 10-400 MHz. It has the maximum at about 40-70 MHz and increases with the decrease of the external cavity length. On the basis of the compound cavity model the phase and gain conditions for the single frequency oscillation are discussed and the threshold modulation depth is calculated, which is shown to be in good agreement with the experimental results.

• Research Organization: Central Research Laboratory, Matsushita Electric Industrial Company, Ltd., Moriguchi, Osaka 570
• OSTI ID: 6023337
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-20:5; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CAVITIES
ELECTRONIC EQUIPMENT
EQUIPMENT
FEEDBACK
FREQUENCY RANGE
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
MHZ RANGE
MODULATION
NOISE
OSCILLATIONS
PNICTIDES
RESONATORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS