Stability analysis for a semiconductor laser in an external cavity

Journal Article · Sat Sep 01 04:00:00 EDT 1984 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1984.1072508· OSTI ID:5260679

Tromborg, B; Olesen, H; Osmundsen, J H

A detailed theoretical analysis of stability is presented for a semiconductor laser in an external cavity. The limits of stable operation are determined as a function of the external cavity parameters and the linewidth enhancement factor infinity. Instability is related to jumps of the laser frequency between external cavity modes (frequency bistability) or to feedback-induced intensity pulsations due to the carrier density dependence of the refractive index. The limit of bistability is derived from the steady-state solutions of the rate equations and the intensity pulsation limit is obtained from a small-signal analysis. This analysis also gives the location of zeros in the system determinant and the resulting FM noise spectrum. For practical applications the authors emphasize the determination of the stable tuning range for the phase in the external cavity and the classification of the possible types of instability for various feedback levels.

• Research Organization: Telecommunication Research Laboratory, DK2200 Copenhagen
• OSTI ID: 5260679
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-20:9; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
DIFFERENTIAL EQUATIONS
ELECTROMAGNETIC RADIATION
EQUATIONS
FEEDBACK
FREQUENCY MODULATION
INSTABILITY
LASER CAVITIES
LASERS
MATHEMATICAL MODELS
MODULATION
NOISE
PERFORMANCE
RADIATIONS
RADIO NOISE
RADIOWAVE RADIATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STABILITY
STATISTICAL MODELS