Epitaxial heterostructures

Conference · Mon Jan 01 04:00:00 EST 1990

OSTI ID:5524801

Shaw, D W ^[1]; Bean, J C ^[2]; Keramidas, V G ^[3]; Peercy, P S ^[4]

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1. Texas Instruments, Dallas, TX (US)
2. AT and T Bell Laboratories, Murray Hill, NJ (US)
3. Bellcore, Red Bank, NJ (US)
4. Sandia National Laboratories, Albuquerque, NM (US)

This book contains the proceedings of a symposium on epitaxial heterostructures, held as part of the 1990 Material s Research Society Spring Meeting. Topics covered include: selective are epitaxy, symmetry breaking in GaInP{sub 2}, disordering of GaAs-AlAs superlattices during Kr irradiation, GaAs heteroepitaxy, InP and GaInP for solar Cells, electronic properties and devices, and characterization methods for epitaxial heterostructures.

• OSTI ID: 5524801
• Report Number(s): CONF-900466--; ISBN: 1-55899-087-9
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602 -- Other Materials-- Structure & Phase Studies
360606* -- Other Materials-- Physical Properties-- (1992-)
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400101 -- Activation
Nuclear Reaction
Radiometric & Radiochemical Procedures
664400 -- Experimentally Derived Information on Atomic & Molecular Properties-- (1992-)
74 ATOMIC AND MOLECULAR PHYSICS
ABSTRACTS
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BACKSCATTERING
DOCUMENT TYPES
ELECTRONIC STRUCTURE
ELEMENTS
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LEADING ABSTRACT
LUMINESCENCE
MATERIALS
MEETINGS
MOLECULAR BEAM EPITAXY
ORDER-DISORDER TRANSFORMATIONS
PHASE TRANSFORMATIONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTODETECTORS
PHOTOLUMINESCENCE
PNICTIDES
SCATTERING
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SUPERLATTICES
SYMMETRY BREAKING
VAPOR PHASE EPITAXY