Polysilicon thin films and interfaces

Conference · Mon Jan 01 04:00:00 EST 1990

OSTI ID:5590771

Kamins, T ^[1]; Raicu, B ^[2]; Thompson, C V ^[3]

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1. Hewlett-Packard Co., Palo Alto, CA (United States)
2. Integrated Technology Associates, Mountain View, CA (US)
3. Massachusetts Eye and Ear Infirmary, Boston, MA (United States)

This volume contains the proceedings of a symposium on polysilicon thin films and interfaces, held as part of the 1990 Materials Research Society Spring Meeting. Topics covered include: crystal grown fo silicon and germanium wafers for photovoltaic devices, microanalysis of tungsten silicide interface, thermal processing of polysilicon thin films, and electrical and optical properties of polysilicon sheets for photovoltaic devices.

• OSTI ID: 5590771
• Report Number(s): CONF-900466--; ISBN: 1-55899-071-2
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
360606 -- Other Materials-- Physical Properties-- (1992-)
ABSTRACTS
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
CRYSTALS
DIRECT ENERGY CONVERTERS
DOCUMENT TYPES
ELECTRICAL PROPERTIES
ELECTRO-OPTICAL EFFECTS
ELEMENTS
EQUIPMENT
FABRICATION
FILMS
GERMANIUM
LEADING ABSTRACT
MATERIALS TESTING
MEETINGS
METALS
MICROSTRUCTURE
PHOTOELECTRIC CELLS
PHOTOELECTROMAGNETIC EFFECTS
PHOTOVOLTAIC CELLS
PHOTOVOLTAIC EFFECT
PHYSICAL PROPERTIES
POLYCRYSTALS
REFRACTORY METAL COMPOUNDS
SEMIMETALS
SHEETS
SILICIDES
SILICON
SILICON COMPOUNDS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
TESTING
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
TUNGSTEN COMPOUNDS
TUNGSTEN SILICIDES