Future radiation-hardened digital components
The producibility of highly complex digital components has advanced greatly within the semiconductor industry. These advances have had both positive and negative impacts with respect to radiation-hardened digital components. This paper addresses state-of-the-art components and provides possible extensions for future capability. Advances in semiconductor processing technology coupled with new materials technology and advanced design/modeling systems provide the potential for improved availability of radiation-hardened digital circuits. Emerging circuits in gallium arsenide offer solutions for very high-speed/high-temperature components that have not been available with silicon technologies to date. Devices with 10,000-gate complexity are available today in custom and semicustom implementations that significantly improve the ability of the system designer to solve specific system requirements at reliability levels much improved over prior techniques. Capability to produce circuits with complexities of 40,000 gates is being developed, and components with gate speeds of 100 ps can be achieved in multiple technologies to satisfy high-speed application needs. The outlook is promising for the future of radiation-hardened digital integrated circuits.
- OSTI ID:
- 5519172
- Report Number(s):
- CONF-870601-
- Journal Information:
- Trans. Am. Nucl. Soc.; (United States), Journal Name: Trans. Am. Nucl. Soc.; (United States) Vol. 54; ISSN TANSA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ARSENIC COMPOUNDS
ARSENIDES
ELECTRONIC CIRCUITS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HARDENING
INTEGRATED CIRCUITS
MICROELECTRONIC CIRCUITS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATION HARDENING
REACTOR INSTRUMENTATION
SILICON ARSENIDES
SILICON COMPOUNDS