Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Linear devices in combined high-level radiation environments

Conference · · Trans. Am. Nucl. Soc.; (United States)
OSTI ID:5408644

The design of precision analog integrated circuits for use in combined high-level radiation environments has traditionally been on a full-custom basis. The use of semicustom design methods has become prevalent in digital devices, with standard cell libraries and gate arrays readily available from multiple vendors. This paper addresses the application of semicustom design techniques to analog parts. In all cases the emphasis is on bipolar technology, since this provides an optimal combination of precision and radiation hardness. A mixed mode analog/digital (A/D) cell family for implementing semicustom designs is described, together with the fabrication process used. Specific processing and design methods are used to provide circuit hardness against neutron, total gamma dose, and transient gamma environments. Semicustom mixed analog/digital design is seen as an appropriate methodology for implementation of medium-performance mixed mode functions for radiation-hardened applications. This leads to trade-offs in process complexity and performance. Full custom design remains necessary for demanding applications such as high-speed A/D conversion and associated sample/hold functions. An A/D cell family optimized for hardness is described, together with the bipolar process used to implement it.

OSTI ID:
5408644
Report Number(s):
CONF-870601-
Journal Information:
Trans. Am. Nucl. Soc.; (United States), Journal Name: Trans. Am. Nucl. Soc.; (United States) Vol. 54; ISSN TANSA
Country of Publication:
United States
Language:
English

Similar Records

Converting a bulk radiation-hardened BiCMOS technology into a dielectrically-isolated process
Conference · Tue Nov 30 23:00:00 EST 1993 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) · OSTI ID:6907995
A hardened technology on SOI for analog devices
Journal Article · Mon Jun 01 00:00:00 EDT 1992 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) · OSTI ID:7037425
Integrating and enhancing tool for ASIC design using MOSIS fabrication
Conference · Sat Mar 31 23:00:00 EST 1990 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) · OSTI ID:6590402

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANALOG-TO-DIGITAL CONVERTERS
DESIGN
DIGITAL-TO-ANALOG CONVERTERS
DOSES
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
EQUIPMENT
FABRICATION
GAMMA RADIATION
HARDENING
INTEGRATED CIRCUITS
IONIZING RADIATIONS
MICROELECTRONIC CIRCUITS
NEUTRON FLUX
PERFORMANCE
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
RADIATION EFFECTS
RADIATION FLUX
RADIATION HARDENING
RADIATIONS
SENSITIVITY