CMOS (complementary metal-oxide semiconductor) design for radiation hardness in digital applications
Conference
·
· Transactions of the American Nuclear Society; (USA)
OSTI ID:5168488
Processing and, to a lesser degree, circuit innovations discussed herein have permitted a steady improvement in the radiation hardness of digital complementary metal-oxide semiconductor (CMOS) integrated circuits from the mid-1970s to the present. The strides made in hardening CMOS for digital applications may be outstripping the designer's capability for exploitation as circuit complexities increase. Tools providing significant productivity enhancement can be adapted for use in circuit design for radiation hardness.
- OSTI ID:
- 5168488
- Report Number(s):
- CONF-890604--
- Journal Information:
- Transactions of the American Nuclear Society; (USA), Journal Name: Transactions of the American Nuclear Society; (USA) Vol. 59; ISSN TANSA; ISSN 0003-018X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ACCURACY
COMPUTERIZED SIMULATION
DESIGN
DOPED MATERIALS
DOSES
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
ELEMENTS
EPITAXY
EQUIPMENT
FILMS
HARDENING
INTEGRATED CIRCUITS
MATERIALS
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SEMIMETALS
SERVICE LIFE
SILICON
SIMULATION
TRANSISTORS
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ACCURACY
COMPUTERIZED SIMULATION
DESIGN
DOPED MATERIALS
DOSES
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
ELEMENTS
EPITAXY
EQUIPMENT
FILMS
HARDENING
INTEGRATED CIRCUITS
MATERIALS
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SEMIMETALS
SERVICE LIFE
SILICON
SIMULATION
TRANSISTORS