High-efficiency and high-power AlGaAs/GaAs laser
Journal Article
·
· IEEE J. Quant. Electron.; (United States)
Light output of 60 mW from the front facet of an AlGaAs/ GaAs SBH laser is obtained in CW operation at room temperature in a junction-up configuration. External quantum efficiency of the facet attains to 52 percent at several milliwatts region in CW operation. The high efficiency enables the laser to oscillate in high power CW operation for the junction-up assembling, and is consistent with a value calculated from the cavity length, reflectivities, and internal loss estimated in this work. The reflectivity of the rear facet has been increased to 0.61 by three-layer coating of SiO/sub 2//a-Si/SiO/sub 2/. The front facet has been passivated by Si/sub 3/N/sub 4/ film deposited by plasma CVD technique. The thickness of the film is controlled so as to decrease the reflectivity of the facet to 0.25. The characteristic temperature of the threshold is estimated to be 120 K. Mode behaviors and high temperature operations are also described.
- Research Organization:
- LSI Research and Development Lab., Mitsubishi Elec. Corp., 4-1 Mizuhara, Itami, Hyogo 664
- OSTI ID:
- 5509172
- Journal Information:
- IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-19:6; ISSN IEJQA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COATINGS
CONTROL
DEPOSITION
EFFICIENCY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
MINERALS
MODE CONTROL
NITRIDES
NITROGEN COMPOUNDS
OPTICAL PROPERTIES
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PLASMA
PNICTIDES
QUANTUM EFFICIENCY
REFLECTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SILICA
SILICON COMPOUNDS
SILICON NITRIDES
SILICON OXIDES
SURFACE COATING
SURFACE PROPERTIES
VAPOR DEPOSITED COATINGS
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COATINGS
CONTROL
DEPOSITION
EFFICIENCY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
MINERALS
MODE CONTROL
NITRIDES
NITROGEN COMPOUNDS
OPTICAL PROPERTIES
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PLASMA
PNICTIDES
QUANTUM EFFICIENCY
REFLECTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SILICA
SILICON COMPOUNDS
SILICON NITRIDES
SILICON OXIDES
SURFACE COATING
SURFACE PROPERTIES
VAPOR DEPOSITED COATINGS