Improved luminescence properties of pulsed laser deposited Eu:Y{sub 2}O{sub 3}thin films on diamond coated silicon substrates
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400 (United States)
Europium activated yttrium oxide (Eu:Y{sub 2}O{sub 3}) phosphor films have been grown {ital in situ} on (100) bare and diamond-coated silicon substrates using a pulsed laser deposition technique. Diamond-coated silicon substrates were prepared using hot filament chemical vapor deposition of diamond onto silicon. Photoluminescence brightness from Eu:Y{sub 2}O{sub 3} films grown at 700{degree}C on diamond-coated silicon substrates was about twice that of films on bare silicon, and reached 80{percent} of the brightness of powders. The higher brightness from Eu:Y{sub 2}O{sub 3} film on diamond-coated silicon substrates is attributed to reduced internal reflections from the Eu:Y{sub 2}O{sub 3} film surface, which results from the roughness of the diamond layer. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 550426
- Journal Information:
- Applied Physics Letters, Vol. 71, Issue 23; Other Information: PBD: Dec 1997
- Country of Publication:
- United States
- Language:
- English
Similar Records
Luminescence behavior of pulsed laser deposited Eu:Y{sub 2}O{sub 3} thin film phosphors on sapphire substrates
Luminescence of pulsed laser deposited Eu doped yttrium oxide films