Luminescence of pulsed laser deposited Eu doped yttrium oxide films
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400 (United States)
Europium doped yttrium oxide (Eu:Y{sub 2}O{sub 3}) phosphor thin films were grown using a pulsed laser deposition (PLD) technique at varying growth conditions. The structural characterization carried out on a series of Eu:Y{sub 2}O{sub 3} films grown on (100) silicon at substrate temperatures in the range of 250{endash}600{degree}C and oxygen pressure in the range of 10{sup {minus}5}Torr to 200 mTorr indicated that films were preferentially (111) oriented. Measurements of photoluminescence and cathodoluminescence properties of laser deposited Eu:Y{sub 2}O{sub 3} thin films and powder used for laser target showed that the best {ital in situ} grown films were {approximately}10{percent}{endash}22{percent} as bright as Eu:Y{sub 2}O{sub 3} powder. A postdeposition annealing treatment of Eu:Y{sub 2}O{sub 3} films led to further improvements in their brightness (up to {approximately}70{percent} with respect to Eu:Y{sub 2}O{sub 3} powder), with cluster sizes of {lt}400nm. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 526849
- Journal Information:
- Applied Physics Letters, Vol. 71, Issue 3; Other Information: PBD: Jul 1997
- Country of Publication:
- United States
- Language:
- English
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