Luminescence of pulsed laser deposited Eu doped yttrium oxide films

Journal Article · Tue Jul 01 04:00:00 EDT 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.119551· OSTI ID:526849

Jones, S L; Kumar, D; Singh, R K; Holloway, P H ^[1]

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1. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400 (United States)

Europium doped yttrium oxide (Eu:Y{sub 2}O{sub 3}) phosphor thin films were grown using a pulsed laser deposition (PLD) technique at varying growth conditions. The structural characterization carried out on a series of Eu:Y{sub 2}O{sub 3} films grown on (100) silicon at substrate temperatures in the range of 250{endash}600{degree}C and oxygen pressure in the range of 10{sup {minus}5}Torr to 200 mTorr indicated that films were preferentially (111) oriented. Measurements of photoluminescence and cathodoluminescence properties of laser deposited Eu:Y{sub 2}O{sub 3} thin films and powder used for laser target showed that the best {ital in situ} grown films were {approximately}10{percent}{endash}22{percent} as bright as Eu:Y{sub 2}O{sub 3} powder. A postdeposition annealing treatment of Eu:Y{sub 2}O{sub 3} films led to further improvements in their brightness (up to {approximately}70{percent} with respect to Eu:Y{sub 2}O{sub 3} powder), with cluster sizes of {lt}400nm. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 526849
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 3 Vol. 71; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CATHODOLUMINESCENCE
CRYSTAL STRUCTURE
DEPOSITION
EUROPIUM
EUROPIUM ADDITIONS
LASER RADIATION
PHOSPHORS
PHOTOLUMINESCENCE
POWDERS
THIN FILMS
YTTRIUM COMPOUNDS
YTTRIUM OXIDES