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Luminescence behavior of pulsed laser deposited Eu:Y{sub 2}O{sub 3} thin film phosphors on sapphire substrates

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.122671· OSTI ID:664655
; ; ;  [1]
  1. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)

Europium-doped yttrium oxide (Eu:Y{sub 2}O{sub 3}) luminescent thin films have been grown {ital in situ} on single crystal (0001) sapphire substrates using a pulsed laser deposition technique. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The photoluminescence (PL) and cathodoluminescence (CL) brightness data obtained from the Eu:Y{sub 2}O{sub 3} films grown under optimized conditions have indicated that sapphire is a promising substrate for the growth of high quality Eu:Y{sub 2}O{sub 3} thin film red phosphor. The success in the fabrication of Eu:Y{sub 2}O{sub 3} films with high PL and CL brightness is attributed to favorable optical properties (low absorption of and low refractive index for red light) of the substrate material and improved growth of grains with unidirectional orientation on (0001) sapphire substrates. {copyright} {ital 1998 American Institute of Physics.}

OSTI ID:
664655
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 21 Vol. 73; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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