Carbon nitride films formed using sputtering and negative carbon ion sources
Book
·
OSTI ID:549808
- Structured Materials Industries, Inc., Piscataway, NJ (United States)
- Stevens Inst. of Tech., Hoboken, NJ (United States)
- Instruments S.A., Inc., Edison, NJ (United States)
The authors report the results of using sputtering and negative carbon ion sources to prepare thin films of carbon nitride. In this work, they compare the structural, tribological, and optical properties of the carbon nitride films that were prepared by two different ion assisted techniques. In the first approach they used a magnetron gun to sputter deposit carbon in a nitrogen atmosphere. The second method utilized a beam of negatively charged carbon ions of 1 to 5 {micro}A/cm{sup 2} current density impinging the substrate simultaneously with a positive nitrogen ion beam produced by a Kaufman source. They were able to synthesize microscopically smooth coatings with the carbon to nitrogen ratio of 1:0.47. These films possess wear rates lower than 5 {times} 10{sup {minus}7} mm{sup 3}/Nm and friction coefficients in the range of 0.16 to 0.6. Raman spectroscopy revealed that the magnetron sputtered films are more structurally disordered than those formed with the negative carbon ion gun. FTIR showed the presence of the C{triple_bond}N stretching mode in both types of films. Finally, spectroscopic ellipsometry produced films with dielectric constants as low as 2.3 in the photon energy range from 1.2 to 5 eV.
- OSTI ID:
- 549808
- Report Number(s):
- CONF-961202--; ISBN 1-55899-342-8
- Country of Publication:
- United States
- Language:
- English
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