Carbon nitride film formation by low energy positive and negative ion beam deposition

Book · Mon Dec 01 04:00:00 EST 1997

OSTI ID:549813

Tsubouchi, N; Horino, Y; Enders, B; Chayahara, A; Kinomura, A; Fujii, K ^[1]

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1. AIST, Ikeda, Osaka (Japan). Osaka National Research Inst.

Using a newly developed ion beam apparatus, PANDA (Positive And Negative ions Deposition Apparatus), carbon nitride films were prepared by simultaneous deposition of mass-analyzed low energy positive and negative ions such as C{sub 2}{sup {minus}}, N+, under ultra high vacuum conditions, in the order of 10{sup {minus}6} Pa on silicon wafer. The ion energy was varied from 50 to 400 eV. The film properties as a function of their beam energy were evaluated by Rutherford Backscattering Spectrometry (RBS), Fourier Transform Infrared spectroscopy (FTIR) and Raman scattering. From the results, it is suggested that the C-N triple bond contents in films depends on nitrogen ion energy.

• OSTI ID: 549813
• Report Number(s): CONF-961202--; ISBN 1-55899-342-8
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARBON IONS
CARBON NITRIDES
CRYSTAL STRUCTURE
ENERGY BEAM DEPOSITION
EXPERIMENTAL DATA
NITROGEN IONS