He implanted channel waveguides of new design for efficient blue laser light generation
Conference
·
OSTI ID:549797
- Forschungszentrum Juelich GmbH (Germany). Inst. for Ion Technology
- ETH-Hoenggerberg, Zuerich (Switzerland). Inst. for Quantum Electronics
The authors present a new mask design and implantation scheme, which uses one single ion implantation step of 2 MeV He ions at a dose of 7 {center_dot} 10{sup 14} to 3 {center_dot} 10{sup 15} He/cm{sup 2} to form channel waveguides in single crystalline KNbO{sub 3}. The special processing of the photoresist mask enables the formation of channel waveguides with a trapezoidal-shaped cross section, providing for the first time simultaneous confinement of both TE and TM modes in a permanent KNbO{sub 3} channel waveguide. 2.6 mW second-harmonic blue light at 441 nm was generated in a 5.8 mm long guide for a fundamental power of approx. 200 mW.
- OSTI ID:
- 549797
- Report Number(s):
- CONF-961202--; ISBN 1-55899-342-8
- Country of Publication:
- United States
- Language:
- English
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