Application of NRA/channeling to study He{sup +} implanted waveguides
- Alabama A and M Univ., Normal, AL (United States)
- Oak Ridge National Lab., TN (United States)
Four different techniques (RBS/channeling, NRA/channeling, prism coupling, and TRIM) for estimating the depth and width of a damaged layer created by ion implantation in LiNbO{sub 3} are compared. Waveguides can be created in LiNbO{sub 3} by lattice disruption damage with light ions (protons, alphas) or by implantation with Ti. End of range damage results in a decrease in refractive index that acts as a low index barrier to create a waveguide. In the electronic stopping region the ordinary index of LiNbO{sub 3} is decreased while the extraordinary index is increased. The damage in the electronic stopping regime is removed by annealing to a temperature lower than that needed to remove the nuclear damage. RBS/channeling is used to examine displacement of Nb atoms and NRA/channeling is used to study displacement of Li atoms using Li(p,{alpha}) and Li(p,{gamma}) reactions. The authors have analyzed waveguides produced by implantation of 1.7 Mev He{sup +}. Comparison of the NRA/Channeling results of as implanted and 175 C and 400 C annealed crystals suggest that electronic stopping induced lattice distortion is responsible for the increase in the extraordinary index in the electronic stopping region.
- Research Organization:
- Oak Ridge National Lab., TN (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 102264
- Report Number(s):
- CONF-9505122--5; ON: DE95017447
- Country of Publication:
- United States
- Language:
- English
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