Characterization of laterally selected Si doped layer formed in GaAs using a low-energy FIB-MBE combined system
Book
·
OSTI ID:549780
- Osaka Univ., Toyonaka, Osaka (Japan)
200 eV and 30 keV Si{sup 2+} FIB were implanted in an MBE-grown GaAs layer in a dose range of 10{sup 12} and 10{sup 13} cm{sup {minus}2}. Successive overlayer regrowth of the GaAs cap layer and postannealing at 800 C for 3--30 s was performed to form buried thin {delta}-doped like layers. From the measurement of the sheet carrier density and the mobility, it was observed that doped layers had a carrier density ranging from 5 {times} 10{sup 11} to 1 {times} 10{sup 13} cm{sup {minus}2} and mobilities which were almost the same order in magnitude as that of an MBE-grown {delta}-doped sample.
- OSTI ID:
- 549780
- Report Number(s):
- CONF-961202--; ISBN 1-55899-342-8
- Country of Publication:
- United States
- Language:
- English
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