Low energy ion irradiation effect on electron transport in GaAs/AlGaAs heterostructures
- Osaka Univ., Toyonaka, Osaka (Japan)
Effects of low energy ion beam induced damages on transport properties of a two-dimensional electron gas (2DEG) system in GaAs/AlGaAs heterostructures have been investigated. 1 keV Ar ions were irradiated on the sample surface at several ion doses (10{sup 11} {minus} 10{sup 13} cm{sup {minus}2}). Carrier density and electron mobility of the 2DEG formed at about 90 nm below the GaAs/AlGaAs heterostructure surface were estimated at 1.5 K by Hall resistance and longitudinal resistance measurements before and after annealing at 400 C for 10 min in an Ar gas ambient. The temperature dependence of those values was also measured for as-grown and for 10{sup 13} cm{sup {minus}2} ion irradiated and subsequently annealed samples. Typical results show that carrier density and mobility are not degraded severely by Ar ion irradiation at doses of 10{sup 13} cm{sup {minus}2} and suggest the possibility to fabricate buried structures in GaAs/AlGaAs heterostructures using low energy Si focused ion beam (FIB) irradiation and subsequent in situ overlayer growth by MBE.
- OSTI ID:
- 375935
- Report Number(s):
- CONF-941144--; ISBN 1-55899-255-3
- Country of Publication:
- United States
- Language:
- English
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