High-speed InGaAsP constricted-Mesa lasers

Journal Article · Sun Jun 01 00:00:00 EDT 1986 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1986.1073043· OSTI ID:5495940

Bowers, J E; Hemenway, B R; Gnauck, A H; Wilt, D P

Recently, the bandwidths of semiconductor lasers, detectors, and optical transmission systems have been dramatically increased. The considerations used to achieve a record 26.5 GHz bandwidth in a 1.3 ..mu..m InGaAsP laser at -60/sup 0/C are described here. The small-signal modulation characteristics of a number of different laser structures are compared. Several large-signal modulation experiments are described with emphasis on the laser response to 8 Gbit/s modulation.

• Research Organization: AT and T Bell Labs., Holmdel, NJ 07733
• OSTI ID: 5495940
• Journal Information: IEEE J. Quant. Electron.; (United States), Vol. QE-22:6
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
MODULATION
COMPARATIVE EVALUATIONS
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
GHZ RANGE 01-100
GRADED BAND GAPS
INDIUM ARSENIDES
INDIUM PHOSPHIDES
LOW TEMPERATURE
SIGNALS
WAVELENGTHS
ARSENIC COMPOUNDS
ARSENIDES
FREQUENCY RANGE
GALLIUM COMPOUNDS
GHZ RANGE
INDIUM COMPOUNDS
LASERS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)