High-speed and low-relative-intensity noise 1. 3. mu. m InGaAsP semi-insulating buried crescent lasers

Journal Article · Sat Jun 01 00:00:00 EDT 1991 · IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/3.89988· OSTI ID:5627569

Cheng, W H; Buchring, K D; Renner, D ^[1]; Shin, S; Su, C B ^[2]

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1. Microelectronics Technology Center, Rockwell International, Newbury Park, CA (US)
2. Dept. of Electrical Engineering, Texas A and M Univ., College Station, TX (US)

This paper reports on the dependence of static and dynamic performance on active layer doping concentration in 1.3 {mu}m InGaAsP semi-insulating buried crescent (SIBC) Fabry-Perot lasers that has been investigated experimentally. The optical loss in the active region is one of the dominant mechanisms in determining the threshold current for doped active layer lasers. These SIBC lasers have a 3 dB modulation bandwidth of 19 GHz for pulsed operation and 16 GHz for CW operation, and have a relative intensity noise below {minus}150 dB/Hz for biased current at 120 mA. This modulation bandwidth is the highest yet reported for InGaAsP lasers with semi-insulating current-blocking layers. The doped active lasers show an initial small degradation rate at 65{degrees}C operation, which gives an acceptable long operation lifetime.

• OSTI ID: 5627569
• Journal Information: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States) Vol. 27:6; ISSN 0018-9197; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
DOPED MATERIALS
ELECTRIC CURRENTS
EMISSION
ENERGY-LEVEL TRANSITIONS
EXPERIMENTAL DATA
FABRY-PEROT INTERFEROMETER
FREQUENCY MODULATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFORMATION
INTERFEROMETERS
LASERS
MATERIALS
MEASURING INSTRUMENTS
MODULATION
NOISE
NUMERICAL DATA
OPERATION
PERFORMANCE TESTING
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
PULSE TECHNIQUES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
STIMULATED EMISSION
TESTING
THRESHOLD CURRENT