Indium migration and controlled lateral bandgap variations in high-power strained layer InGaAs-AlGaAs lasers grown on nonplanar substrates

Journal Article · Sat Jun 01 00:00:00 EDT 1991 · IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/3.89965· OSTI ID:5495131

Brovelli, L R; Arent, D J; Jaeckel, H; Meier, H P ^[1]

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1. IBM Research Div., Zurich Research Lab., CH-8803 Rueschlikon (CH)

Strained single quantum well InGaAs-AlGaAs graded-index separate confinement heterostructure lasers have been grown by molecular beam epitaxy over nonplanar (100) oriented substrates. We observed large variations in the effective bandgap of the strained QW as a function of the width of the underlying substrate ridge or groove. These variations are associated with increased In composition in the strained quantum well which arises from incorporation of adatoms migrating from the low growth (311)A side facet to the preferential growth (100) active area facet. We have investigated in more detail the properties of laser structures consisting of two separately contacted segments along the laser cavity with different bandgaps. Using the segment with the larger bandgap as passive waveguide cavity, we were able to measure its bandtail absorption and characteristic Urbach energy by comparing the transmitted to the directly emitted spontaneous emission. The results included in this paper, show the possibility of either building multiple wavelength laser arrays or nonabsorbing mirror, passive waveguides, and quantum well modulators with single-step molecular beam epitaxy.

• OSTI ID: 5495131
• Journal Information: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States), Vol. 27:6; ISSN 0018-9197
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
47 OTHER INSTRUMENTATION
HETEROJUNCTIONS
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR LASERS
QUANTUM EFFICIENCY
CHEMICAL COMPOSITION
FREQUENCY MODULATION
LASER MATERIALS
OPTICAL PROPERTIES
SUBSTRATES
WAVEGUIDES
WAVELENGTHS
EFFICIENCY
EPITAXY
JUNCTIONS
LASERS
MATERIALS
MODULATION
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SOLID STATE LASERS
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