Ion mixing of Al/sub 2/O/sub 3/ and Al films on SiO/sub 2/
Journal Article
·
· J. Vac. Sci. Technol., A; (United States)
The influence of ion implantation on the interfacial chemistry, morphology, and adhesion of Al and Al/sub 2/ O/sub 3/ films on SiO/sub 2/ was examined. The specimens were implanted with varying doses of /sup 131/ Xe/sup +/ and /sup 84/ Kr/sup +/ at different substrate temperatures (2 x 10/sup 16/ Xe cm/sup -2/ at 130 /sup 0/C, 1 x 10/sup 17/ Kr cm/sup -2/ at 70 /sup 0/C, and 1 x 10/sup 17/ Kr cm/sup -2/ at 350 /sup 0/C). These implanted specimens were compared to Al/SiO/sub 2/ and Al/sub 2/ O/sub 3/ /SiO/sub 2/ specimens vacuum annealed at 600 and 1000 /sup 0/C, respectively. Unlike thermal processing, ion implantation induced substantial interfacial mixing and adhesion enhancement in both the Al/sub 2/ O/sub 3/ /SiO/sub 2/ and Al/SiO/sub 2/ specimens. Interfacial mixing and adhesion enhancement increased with ion dose. The adhesion increases (3--25 x ) were attributed primarily to interfacial Si--O--Al bonding. Interfacial bonding (adhesion enhancement) was promoted most extensively by implants which produced glassy interfacial mixtures. Implants that induced crystallization, resulting in phase separation, produced less extensive interfacial bonding. The /sup 131/ Xe/sup +/ and /sup 84/ Kr/sup +/ implants resulted in bubble, void, dendrite, and crack formation. Characterization was performed using Auger electron spectroscopy, x-ray photoelectron spectroscopy, scanning electron microscopy, and x-ray diffraction. Film adhesion was examined using a scratch test.
- Research Organization:
- Materials Sciences Laboratory, The Aerospace Corporation, El Segundo, California 90245
- OSTI ID:
- 5489739
- Journal Information:
- J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 6:2; ISSN JVTAD
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360106* -- Metals & Alloys-- Radiation Effects
360206 -- Ceramics
Cermets
& Refractories-- Radiation Effects
ADHESION
ALUMINIUM
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
AUGER ELECTRON SPECTROSCOPY
CHALCOGENIDES
CHARGED PARTICLES
CHEMICAL BONDS
CHEMISTRY
COHERENT SCATTERING
COLLISIONS
CRACKS
CRYSTAL STRUCTURE
CRYSTAL-PHASE TRANSFORMATIONS
CRYSTALLIZATION
DAYS LIVING RADIOISOTOPES
DIFFRACTION
ELECTRON MICROSCOPY
ELECTRON SPECTROSCOPY
ELEMENTS
EVEN-EVEN NUCLEI
EVEN-ODD NUCLEI
HIGH TEMPERATURE
INTERFACES
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
ION COLLISIONS
ION IMPLANTATION
IONS
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
KRYPTON 84
KRYPTON IONS
KRYPTON ISOTOPES
LOW TEMPERATURE
MEDIUM TEMPERATURE
METALS
MICROSCOPY
MINERALS
MIXING
MORPHOLOGY
NUCLEI
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
PHOTOELECTRON SPECTROSCOPY
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIOISOTOPES
SCANNING ELECTRON MICROSCOPY
SCATTERING
SILICA
SILICON COMPOUNDS
SILICON OXIDES
SPECTROSCOPY
STABLE ISOTOPES
VERY HIGH TEMPERATURE
VOIDS
X-RAY DIFFRACTION
XENON 131
XENON IONS
XENON ISOTOPES
360106* -- Metals & Alloys-- Radiation Effects
360206 -- Ceramics
Cermets
& Refractories-- Radiation Effects
ADHESION
ALUMINIUM
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
AUGER ELECTRON SPECTROSCOPY
CHALCOGENIDES
CHARGED PARTICLES
CHEMICAL BONDS
CHEMISTRY
COHERENT SCATTERING
COLLISIONS
CRACKS
CRYSTAL STRUCTURE
CRYSTAL-PHASE TRANSFORMATIONS
CRYSTALLIZATION
DAYS LIVING RADIOISOTOPES
DIFFRACTION
ELECTRON MICROSCOPY
ELECTRON SPECTROSCOPY
ELEMENTS
EVEN-EVEN NUCLEI
EVEN-ODD NUCLEI
HIGH TEMPERATURE
INTERFACES
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
ION COLLISIONS
ION IMPLANTATION
IONS
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
KRYPTON 84
KRYPTON IONS
KRYPTON ISOTOPES
LOW TEMPERATURE
MEDIUM TEMPERATURE
METALS
MICROSCOPY
MINERALS
MIXING
MORPHOLOGY
NUCLEI
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
PHOTOELECTRON SPECTROSCOPY
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIOISOTOPES
SCANNING ELECTRON MICROSCOPY
SCATTERING
SILICA
SILICON COMPOUNDS
SILICON OXIDES
SPECTROSCOPY
STABLE ISOTOPES
VERY HIGH TEMPERATURE
VOIDS
X-RAY DIFFRACTION
XENON 131
XENON IONS
XENON ISOTOPES