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Ion mixing of Al/sub 2/O/sub 3/ and Al films on SiO/sub 2/

Journal Article · · J. Vac. Sci. Technol., A; (United States)
DOI:https://doi.org/10.1116/1.574978· OSTI ID:5489739
The influence of ion implantation on the interfacial chemistry, morphology, and adhesion of Al and Al/sub 2/ O/sub 3/ films on SiO/sub 2/ was examined. The specimens were implanted with varying doses of /sup 131/ Xe/sup +/ and /sup 84/ Kr/sup +/ at different substrate temperatures (2 x 10/sup 16/ Xe cm/sup -2/ at 130 /sup 0/C, 1 x 10/sup 17/ Kr cm/sup -2/ at 70 /sup 0/C, and 1 x 10/sup 17/ Kr cm/sup -2/ at 350 /sup 0/C). These implanted specimens were compared to Al/SiO/sub 2/ and Al/sub 2/ O/sub 3/ /SiO/sub 2/ specimens vacuum annealed at 600 and 1000 /sup 0/C, respectively. Unlike thermal processing, ion implantation induced substantial interfacial mixing and adhesion enhancement in both the Al/sub 2/ O/sub 3/ /SiO/sub 2/ and Al/SiO/sub 2/ specimens. Interfacial mixing and adhesion enhancement increased with ion dose. The adhesion increases (3--25 x ) were attributed primarily to interfacial Si--O--Al bonding. Interfacial bonding (adhesion enhancement) was promoted most extensively by implants which produced glassy interfacial mixtures. Implants that induced crystallization, resulting in phase separation, produced less extensive interfacial bonding. The /sup 131/ Xe/sup +/ and /sup 84/ Kr/sup +/ implants resulted in bubble, void, dendrite, and crack formation. Characterization was performed using Auger electron spectroscopy, x-ray photoelectron spectroscopy, scanning electron microscopy, and x-ray diffraction. Film adhesion was examined using a scratch test.
Research Organization:
Materials Sciences Laboratory, The Aerospace Corporation, El Segundo, California 90245
OSTI ID:
5489739
Journal Information:
J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 6:2; ISSN JVTAD
Country of Publication:
United States
Language:
English

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