X-ray emission study of ion beam mixed Cu/Al films on polyimide

Journal Article · Mon Mar 01 04:00:00 EST 1999 · Journal of Vacuum Science and Technology, A

DOI:https://doi.org/10.1116/1.581623· OSTI ID:321487

Kurmaev, E Z; Zatsepin, D A ^[1]; Winarski, R P; Stadler, S; Ederer, D L ^[2]; Moewes, A ^[3]; Fedorenko, V V; Shamin, S N; Galakhov, V R ^[4]; Chang, G S; Whang, C N ^[5]

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1. Institute of Metal Physics, Russian Academy of Sciences --- Ural Division, 620219 Yekaterinburg GSP-170 (Russia)
2. Department of Physics, Tulane University, New Orleans, Louisiana 70118 (United States)
3. CAMD, Louisiana State University, Baton Rouge, Louisiana 70803 (United States)
4. Institute of Metal Physics, Russian Academy of Sciences---Ural Division, 620219 Yekaterinburg GSP-170 (Russia)
5. Atomic-Scale Surface Science Research Center and Department of Physics, Yonsei University, Seoul 120-749 (Korea)

Cu (40 nm)/Al/polyimide/Si was mixed with 80 keV Ar{sup +} and N{sub 2}{sup +} from 5.0{times}10{sup 15} to 15{times}10{sup 15} ions/cm{sup 2}. Ultrasoft x-ray emission valence spectra (XES) of Cu, C, N and O excited by electron and photon radiation were used for study of chemical reactions in Cu/Al/PI/Si and PI/Si systems induced by ion beam mixing in dependence of type of ions and dose. It is found that ion beam mixing changes the chemical state of Cu atoms with respect to that of pure metal. These changes depend on the dose of ion beam bombardment and type of ions and are attributed to a formation of CuAl{sub 2}O{sub 4} interfacial layer, which can be responsible for enhanced interfacial adhesion strength. On the other hand, it is shown that the shape of C {ital K}{alpha}, N {ital K}{alpha} and O {ital K}{alpha} XES of ion beam mixed polyimide layer (PI/Si) is modified with ion bombardment. This means that the ion-beam mixing process is able to break the bonding of constituent atoms of irradiated PI layers and can induce the formation of chemically bonded complexes linking atoms in the Cu, Al and PI layers.{copyright} {ital 1999 American Vacuum Society.}

• OSTI ID: 321487
• Journal Information: Journal of Vacuum Science and Technology, A, Journal Name: Journal of Vacuum Science and Technology, A Journal Issue: 2 Vol. 17; ISSN 0734-2101; ISSN JVTAD6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM
ARGON IONS
CHEMICAL REACTIONS
COPPER
ELECTRONIC STRUCTURE
ION BEAMS
KEV RANGE 10-100
NITROGEN IONS
POLYMERS
RADIATION EFFECTS
SILICON
THIN FILMS
X-RAY EMISSION ANALYSIS