Development of ultrathin silicon and gallium arsenide solar cell for space application

Conference · Sat Oct 01 04:00:00 EDT 1983 · INTELEC, Int. Telecommun. Energy Conf. (Proc.); (United States)

OSTI ID:5456522

Shimodaira, M; Matsuda, S

The ultrathin silicon (Si) solar cell and gallium arsenide (Ga As) solar cell for increasing radiation resistance and improving power to mass ratio and improving high energy conversion efficiency, have been developed from 1982. NASDA has almost completed fundemental evaluation of these solar cells and their prospects for space applications. The ultrathin 50..mu..m Si solar cell with maximum efficiency 13.9% (average 13.2%) at Air Mass Zero (AM0) (135.3mW/cm/sup 2/ illumination and at 28/sup 0/C) and the remaining 1sc ratio of 82% after irradiation of 1MeV electron fluences of 1 x 10/sup 15/ e/cm/sup 2/ have been demonstrated.

• Research Organization: NASDA
• OSTI ID: 5456522
• Report Number(s): CONF-831010-
• Conference Information: Journal Name: INTELEC, Int. Telecommun. Energy Conf. (Proc.); (United States)
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
140600 -- Solar Energy-- Photovoltaic Power Systems
ALUMINIUM COMPOUNDS
COMMUNICATIONS
CONVERSION
DIRECT ENERGY CONVERSION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRONIC EQUIPMENT
ENERGY CONVERSION
EQUIPMENT
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
NEUTRON FLUENCE
PHOSPHORUS COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHOTOVOLTAIC CONVERSION
PHOTOVOLTAIC POWER SUPPLIES
POWER SUPPLIES
RADIATIONS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SOLAR RADIATION
SPACE VEHICLES
STELLAR RADIATION
VEHICLES