Interface barrier heights in metal-aluminum nitride-silicon structure by internal photoemission

Journal Article · Sat May 01 04:00:00 EDT 1982 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.331105· OSTI ID:5453779

Morita, M; Tsubouchi, K; Mikoshiba, N; Yokoyama, S

Energy barrier heights at interfaces of metal-aluminum nitride (AlN)-silicon(Si) structures with Au and Al as metal electrodes have been measured by internal photoemission. Measured results in low-photon energy region were interpreted in terms of a hole internal photoemission mechanism. Energy barrier heights for holes from the Au or Al Fermi level and from the top of Si valence band, to the top of AlN valence band, were found to be 2.0 +- 0.2, 3.6 +- 0.2, and 1.9 +- 0.2 eV, respectively. These results were in good agreement with the values measured by the Metal-Insulator-Semiconductor capacitance-voltage techniques. On the other hand, measured results in the high-energy region were interpreted in terms of both electron and hole emission mechanisms. The band gap energy values of AlN obtained by internal photoemission measurements were nearly equal to the value by optical absorption measurements, except for the value obtained from energy barriers at the Al-AlN interface. It was also found that the enhancement of photocurrent with time is caused by space charges produced by both electron and hole trappings.

• Research Organization: Research Institute of Electrical Communication, Tohoku University, Katahira, Sendai 980, Japan
• OSTI ID: 5453779
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 53:5; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ALUMINIUM
ALUMINIUM COMPOUNDS
ALUMINIUM NITRIDES
DATA
ELECTRODES
ELEMENTS
EMISSION
ENERGY GAP
ENERGY LEVELS
EXPERIMENTAL DATA
FERMI LEVEL
GOLD
INFORMATION
INTERFACES
MATHEMATICAL MODELS
METALS
NITRIDES
NITROGEN COMPOUNDS
NUMERICAL DATA
PHOTOEMISSION
PNICTIDES
POTENTIALS
SECONDARY EMISSION
SEMIMETALS
SILICON
SPACE CHARGE
TRANSITION ELEMENTS
VALENCE