Angular distribution of Si atoms sputtered by keV Ar/sup +/ ions

Journal Article · Thu May 01 04:00:00 EDT 1980 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.327957· OSTI ID:5449304

Okutani, T; Shikata, M; Ichimura, S; Shimizu, R

Angular distributions of sputtered Si atoms from polycrystalline Si targets were measured for Ar/sup +/ ions of 3 and 10 keV, at angles of incidence of 0/sup 0/ (normal incidence) and 60/sup 0/. The results were compared with the theoretical ones obtained from Monte Carlo calculations by Kang et al. Theory describes qualitatively the experimental results fairly well. Some discrepancy between the theoretical and experimental results was, however, found in the preferred ejection angles. The preferred ejection angle of the experimental results for 10 keV at angle of incidence of 60/sup 0/ agrees very well with that suggested by the universal curve of the correlation between the preferred ejection angle and sputtering yield, which has been proposed by Betz et al.

• Research Organization: Department of Applied Physics, Osaka University, Suita, Osaka 565 Japan
• OSTI ID: 5449304
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 51:5; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

640301* -- Atomic
Molecular & Chemical Physics-- Beams & their Reactions
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANGULAR DISTRIBUTION
ARGON IONS
CHARGED PARTICLES
COLLISIONS
CORRELATIONS
CRYSTALS
DATA
DISTRIBUTION
ELEMENTS
ENERGY RANGE
INFORMATION
IONS
KEV RANGE
KEV RANGE 01-10
MATHEMATICAL MODELS
MONTE CARLO METHOD
POLYCRYSTALS
SEMIMETALS
SILICON
SPUTTERING
TARGETS