Molecular dynamics simulations of 30 and 2 keV Ga in Si

Journal Article · Sat Sep 15 04:00:00 EDT 2007 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.2756541· OSTI ID:21020875

Giannuzzi, Lucille A; Garrison, Barbara J ^[1]

---

1. FEI Company, 5350 NE Dawson Creek Drive, Hillsboro, Oregon 97124 (United States)

Focused Ga{sup +} ion beams are routinely used at high incident angles for specimen preparation. Molecular dynamics simulations of 2 and 30 keV Ga bombardment of Si(011) at a grazing angle of 88 deg. were conducted to assess sputtering characteristics and damage depth. The bombardment of atomically flat surfaces and surfaces with vacancies shows little energy transfer yielding ion reflection. The bombardment of surfaces with adatoms allows for the coupling of the energy of motion parallel to the surface into the substrate resulting in sputtering. The adatom and one other Si atom eject, and motion in the substrate occurs down to a depth of 13 A. Experimental evidence shows that sputtering is a reality, suggesting that an atomically flat surface is never achieved.

• OSTI ID: 21020875
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films Journal Issue: 5 Vol. 25; ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTALS
DAMAGE
DEPTH
ENERGY TRANSFER
GALLIUM IONS
GRAZING
ION BEAMS
KEV RANGE
MOLECULAR DYNAMICS METHOD
SEMICONDUCTOR MATERIALS
SILICON
SIMULATION
SPUTTERING
SUBSTRATES
SURFACES
VACANCIES