Microstructure and atomic effects on the electroluminescent efficiency of SrS:Ce thin film devices

Journal Article · Sat Nov 01 04:00:00 EST 1997 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.366547· OSTI ID:544794

Warren, W L; Seager, C H ^[1]; Sun, S ^[2]; Naman, A; Holloway, P H; Jones, K S ^[3]; Soininen, E ^[4]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185-1349 (United States)
2. Planar America Incorporated, 1400 North West Compton Drive, Beaverton, Oregon 97006 (United States)
3. Department of Materials Science, University of Florida, Gainesville, Florida 32611 (United States)
4. Planar International Limited, P.O. Box 46, SF-02201 Espoo (Finland)

Transmission electron microscopy and x-ray diffraction data show that rapid thermal anneals of SrS:Ce thin films enhance grain size and reduce crystalline defects. Electron paramagnetic resonance results suggest that these anneals lead to less variance in the crystal field environments at the nearly cubic Ce{sup 3+} sites along with the formation of another type of Ce{sup 3+} site believed to involve a nearby Sr vacancy. We suggest that the association of Ce{sup 3+} sites with V{sub Sr} shifts the electroluminescence towards larger wavelengths as the symmetry of the activator site is lowered. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 544794
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 82; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CERIUM
CERIUM ADDITIONS
CRYSTAL DEFECTS
DOPED MATERIALS
ELECTROLUMINESCENCE
GRAIN SIZE
MICROSTRUCTURE
PHOSPHORS
STRONTIUM COMPOUNDS
STRONTIUM SULFIDES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION