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Title: Dynamic space charge mechanism in SrS:Ce ac thin-film electroluminescent devices

Abstract

Dynamic space charge in SrS:Ce ac thin-film electroluminescent (ACTFEL) devices is not a SrS host property. In SrS:Ce ACTFEL devices, a lack of charge injection from interface states leads to space charge formation and to dynamic space charge formation. The dynamic space charge is formed by the impact ionization of Ce and of Ce induced deep level traps. The crystal field symmetry of the Ce{sup 3+} site determines its ionization probability. Ce{sup 3+} sites of cubic crystal field symmetry have a lower ionization probability than Ce{sup 3+} sites with axial crystal field symmetry. A prerequisite for dynamic space charge, i.e., short lived space charge, is the annihilation of space charge. The charge responsible for space charge annihilation originates from trap levels with an activation energy of about 9 meV. The temperature dependence of the annihilation of the space charge is responsible for the observed temperature dependence of the dynamic space charge formation, the conduction charge, and the quantum efficiency. {copyright} 2001 American Institute of Physics.

Authors:
; ; ; ; ;
Publication Date:
Sponsoring Org.:
(US)
OSTI Identifier:
40230569
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 90; Journal Issue: 4; Other Information: DOI: 10.1063/1.1384851; Othernumber: JAPIAU000090000004001992000001; 022116JAP; PBD: 15 Aug 2001; Journal ID: ISSN 0021-8979
Publisher:
The American Physical Society
Country of Publication:
United States
Language:
English
Subject:
73 NUCLEAR PHYSICS AND RADIATION PHYSICS; ACTIVATION ENERGY; ANNIHILATION; CRYSTAL FIELD; IONIZATION; PHYSICS; PROBABILITY; QUANTUM EFFICIENCY; SPACE CHARGE; SYMMETRY; TEMPERATURE DEPENDENCE

Citation Formats

Peter, Manuela, Murayama, Masatoshi, Nishimura, Satoru, Ohmi, Koutoku, Tanaka, Shosaku, and Kobayashi, Hiroshi. Dynamic space charge mechanism in SrS:Ce ac thin-film electroluminescent devices. United States: N. p., 2001. Web. doi:10.1063/1.1384851.
Peter, Manuela, Murayama, Masatoshi, Nishimura, Satoru, Ohmi, Koutoku, Tanaka, Shosaku, & Kobayashi, Hiroshi. Dynamic space charge mechanism in SrS:Ce ac thin-film electroluminescent devices. United States. https://doi.org/10.1063/1.1384851
Peter, Manuela, Murayama, Masatoshi, Nishimura, Satoru, Ohmi, Koutoku, Tanaka, Shosaku, and Kobayashi, Hiroshi. 2001. "Dynamic space charge mechanism in SrS:Ce ac thin-film electroluminescent devices". United States. https://doi.org/10.1063/1.1384851.
@article{osti_40230569,
title = {Dynamic space charge mechanism in SrS:Ce ac thin-film electroluminescent devices},
author = {Peter, Manuela and Murayama, Masatoshi and Nishimura, Satoru and Ohmi, Koutoku and Tanaka, Shosaku and Kobayashi, Hiroshi},
abstractNote = {Dynamic space charge in SrS:Ce ac thin-film electroluminescent (ACTFEL) devices is not a SrS host property. In SrS:Ce ACTFEL devices, a lack of charge injection from interface states leads to space charge formation and to dynamic space charge formation. The dynamic space charge is formed by the impact ionization of Ce and of Ce induced deep level traps. The crystal field symmetry of the Ce{sup 3+} site determines its ionization probability. Ce{sup 3+} sites of cubic crystal field symmetry have a lower ionization probability than Ce{sup 3+} sites with axial crystal field symmetry. A prerequisite for dynamic space charge, i.e., short lived space charge, is the annihilation of space charge. The charge responsible for space charge annihilation originates from trap levels with an activation energy of about 9 meV. The temperature dependence of the annihilation of the space charge is responsible for the observed temperature dependence of the dynamic space charge formation, the conduction charge, and the quantum efficiency. {copyright} 2001 American Institute of Physics.},
doi = {10.1063/1.1384851},
url = {https://www.osti.gov/biblio/40230569}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 4,
volume = 90,
place = {United States},
year = {Wed Aug 15 00:00:00 EDT 2001},
month = {Wed Aug 15 00:00:00 EDT 2001}
}