Extended x-ray absorption fine structure study of Al{sub x}Ga{sub (1{minus}x)}N films

Journal Article · Tue Apr 01 04:00:00 EST 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.118963· OSTI ID:544505

Miyano, K E ^[1]; Woicik, J C; Robins, L H; Bouldin, C E ^[2]; Wickenden, D K ^[3]

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1. Center for Advanced Technology for Ultrafast Photonics Materials and Applications, City University of New York, New York, New York 10031 (United States)
2. National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
3. Applied Physics Laboratory, The Johns Hopkins University, Laurel, Maryland 20723 (United States)

Extended x-ray absorption fine structure above the Ga{endash}K edge has been used to study the local structure of Al{sub x}Ga{sub 1{minus}x}N films grown by metal organic chemical vapor deposition. With increasing Al content, x, the Ga{endash}N bond length decreases, but much less than the average bond length. On the other hand, the x dependence of the Ga{endash}Ga and Ga{endash}Al distances does follow the variation of the average cation{endash}cation distance. We conclude that bond angle distortions accommodate the differences between the Ga{endash}N and Al{endash}N bond lengths. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 544505
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 70; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
BOND ANGLE
BOND LENGTHS
CHEMICAL VAPOR DEPOSITION
EXAFS
GALLIUM NITRIDES
STRUCTURAL CHEMICAL ANALYSIS
THIN FILMS
VAPOR DEPOSITED COATINGS
X-RAY SPECTROSCOPY