A time-dependent two-dimensional analysis of the turn-off process in a gate turn-off thyristor (GTO)

Journal Article · Tue Nov 30 23:00:00 EST 1993 · IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/16.249486· OSTI ID:5444085

Vobecky, J ^[1]; Bleichner, H; Rosling, M ^[2]; Nordlander, E ^[3]

---

1. Czech Technical Univ., Prague (Czechoslovakia). Dept. of Microelectronics
2. Uppsala Univ. (Sweden). Dept. of Technology
3. Gaevle/Sandviken Univ. College, Sandviken (Sweden)

A time-resolved free-carrier absorption technique is used to describe transient gate turn-off thyristor (GTO) phenomena two-dimensional. The measurements are spatially resolved in the anode-to-cathode direction, as well as in the direction determined by the cathode length. Effects associated with charge removal during the GTO turn-off cycle with respect to external circuit conditions are discussed. The behavior of resistively and inductively loaded GTO:s is explained on basis of experimental results. Modeled results, published by others, are used for comparison.

• OSTI ID: 5444085
• Journal Information: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States) Vol. 40:12; ISSN 0018-9383; ISSN IETDAI
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
CHARGE CARRIERS
DATA
DYNAMICS
EXPERIMENTAL DATA
INFORMATION
MECHANICS
NUMERICAL DATA
OPERATION
SEMICONDUCTOR DEVICES
THYRISTORS