Ultralow threshold graded-index separate-confinement heterostructure single quantum well (Al,Ga)As lasers

Journal Article · Tue Mar 01 04:00:00 EST 1988 · J. Vac. Sci. Technol., B; (United States)

DOI:https://doi.org/10.1116/1.584393· OSTI ID:5440934

Derry, P L; Chen, H Z; Morkoc, H; Yariv, A; Lau, K Y; Bar-Chaim, N; Lee, K; Rosenberg, J

Broad area graded-index separate-confinement heterostructure single quantum well lasers grown by molecular-beam epitaxy (MBE) with threshold current density as low as 93 A/cm/sup 2/ (520 ..mu..m long) have been fabricated. Buried lasers formed from similarly structured MBE material with liquid phase epitaxy regrowth had threshold currents at submilliampere levels when high reflectivity coatings were applied to the end facets. A cw threshold current of 0.55 mA was obtained for a laser with facet reflectivities of approx.80%, a cavity length of 120 ..mu..m, and an active region stripe width of 1 ..mu..m. These devices driven directly with logic level signals have switch-on delays <50 ps without any current prebias. Such lasers permit fully on--off switching while at the same time obviating the need for bias monitoring and feedback control.

• Research Organization: California Institute of Technology, Pasadena, California 91125
• OSTI ID: 5440934
• Journal Information: J. Vac. Sci. Technol., B; (United States), Journal Name: J. Vac. Sci. Technol., B; (United States) Vol. 6:2; ISSN JVTBD
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
ELECTRICAL EQUIPMENT
EPITAXY
EQUIPMENT
EXPERIMENTAL DATA
FABRICATION
FEEDBACK
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASERS
MOLECULAR BEAM EPITAXY
NUMERICAL DATA
OPTICAL REFLECTION
PNICTIDES
REFLECTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SWITCHES
THRESHOLD CURRENT