Properties of buried heterostructure single quantum-well (Al, Ga) As lasers

Thesis/Dissertation · Sun Jan 01 04:00:00 EST 1989

OSTI ID:5169613

Derry, P L

Single quantum-well (SQW) lasers with high reflectivity end facet coatings have dramatically reduced threshold currents as a result of the smaller volume of the (active) quantum-well region. A c-w threshold current of 0.55 mA was obtained for a buried graded-index separate-confinement heterostructure SQW laser with facet reflectivities of {approximately}80%, a cavity length of 120 {mu}m, and an active region stripe width of 1 {mu}m. This is believed to be the lowest threshold current so far reported for any semiconductor laser at room temperature. The submilliampere threshold currents of these lasers allow them to be modulated at high speed without any current prebias or feedback monitoring. The relaxation oscillation frequency for these lasers was also measured. Values of differential gain derived from these measurements demonstrated that the differential gain in the uncoated lasers is less than in the coated devices. As predicted, SQW lasers have substantially narrower spectral linewidths than bulk double heterostructure lasers.

• Research Organization: California Inst. of Tech., Pasadena, CA (USA)
• OSTI ID: 5169613
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
CURRENTS
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
LASERS
LINE WIDTHS
MODULATION
OSCILLATION MODES
PHYSICAL PROPERTIES
RELAXATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
THRESHOLD CURRENT