Interface-state effects in irradiated MOS structures

Journal Article · Wed Nov 30 23:00:00 EST 1977 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.323575· OSTI ID:5439892

Hughes, G W

The effect that ionizing radiation has on Si-SiO/sub 2/ MOS devices is to create trapped holes and interface states at the Si-SiO/sub 2/ interface. Several recent publications claim that it is possible to distinguish donor or acceptor interface states by analyzing C-V curves. It is shown here that in the presence of interface states it is not possible, in general, to determine either interface-state type or the quantity of fixed oxide charge from C-V measurements. Furthermore, observed differences between flatband voltage shifts on p- and n-type MOS devices are shown to be independent of whether interface states are donors or acceptors.

• Research Organization: RCA Laboratories, David Sarnoff Research Center, Princeton, New Jersey 08540
• OSTI ID: 5439892
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 48:12; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
CAPACITORS
CHALCOGENIDES
ELECTRICAL EQUIPMENT
ELECTRONIC STRUCTURE
ELEMENTS
EQUIPMENT
INTERFACES
IONIZING RADIATIONS
IRRADIATION
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES